Eichung für zweikanalige Strahlungsmessung

Calibration pour détection de rayonnement à deux canaux

Calibration for bichannel radiation detection

Abstract

The system and method for pyrometrically determining the temperature of a semiconductor wafer (15) within a processing chamber (13) accurately determines the actual emissivity of the semiconductor wafer at a reference temperature using multiple pyrometers (9,11) operating at different wavelengths. The processing temperature of the wafer (15) is then determined and controlled in accordance with the actual emissivity of the wafer for more precise thermal processing.

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Patent Citations (4)

    Publication numberPublication dateAssigneeTitle
    GB-2179445-AMarch 04, 1987Weinert E MessgeraetewerkMulti wavelength pyrometric measurement
    JP-S62110127-AMay 21, 1987Koyo Rindobaagu KkMethod for measuring temperature of article to be heat-treated in optical heat-treatment apparatus
    US-4969748-ANovember 13, 1990Peak Systems, Inc.Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing
    WO-9012295-A1October 18, 1990Plessey Overseas LimitedTemperature-controlled bodies

NO-Patent Citations (1)

    Title
    PATENT ABSTRACTS OF JAPAN vol. 11, no. 324 (P-628)22 October 1987 & JP-A-62 110 127 ( MATSUSHITA TOMOHIKO K K ) 21 May 1987

Cited By (4)

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    EP-1067370-A1January 10, 2001Applied Materials, Inc.Thermische Behandlung von Halbleitersubstraten
    US-6016190-AJanuary 18, 20003T True Temperature TechnologiesMethod and apparatus for true temperature determination
    WO-2008051211-A1May 02, 2008J.A. Woollam Co., Inc.Système et procédé pour régler et compenser des erreurs d'aoi et de poi d'un faisceau de rayonnement em
    WO-9711340-A1March 27, 19973T True Temperature TechnologiesMethod and apparatus for true temperature determination